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We investigate the transport properties of charge carriers in disordered organic semiconductors using a model that relates a mobility with charge carriers (not with small polarons) hopping by thermal activation. Considering Miller and Abrahams expression for a hopping rate of a charge carrier between localized states of a Gaussian distributed energies, we employ Monte Carlo simulation methods, and calculate the average mobility of finite charge carriers focusing on a lower density region where the mobility was shown experimentally to be independent of the density. There are Monte Carlo simulation results for density dependence of mobility reported for hopping on regularly spaced states neglecting the role of spatial disorder, which does not fully mimic the hopping of charge carriers on randomly distributed states in disordered system as shown in recent publications. In this work we include the spatial disorder and distinguish the effects of electric field and density which are not separable in the experiment, and investigate the influence of density and electric field on mobility at different temperatures comparing with experimental results and that found in the absence of the spatial disorder. Moreover, we analyze the role of density and localization length on temperature and electric field dependence of mobility. Our results also give additional insight regarding the value of localization length that has been widely used as 0.1b where b is a lattice sites spacing.

condensed matter

Charge Carriers Density, Temperature, and Electric Field Dependence of the Charge Carrier Mobility in Disordered Organic Semiconductors in Low Density Region