English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The article presents the results of an experimental study of the transport of charge carriers through semiconductor PANI-polystyrene/ ferroelectric PVDF-TrFE interface. Current-voltage characteristics of the structure under study have a typical form for memristors and may be explained by the movement of charge carriers in the internal switchable field of the crystal ferroelectric microregions located within a bulk volume of amorphous PVDF-TrFE matrix. This assumption is subject to XRD phase analysis, FTIR spectroscopy, and X-ray EDS microanalysis. A long-term (about 100 h) relaxation is detected for the resistance of the PANI-polysturene/PVDF-TrFE interface after the current-voltage characteristics measurement cycle that is associated with the processes of capture and release traps of charge carriers.

Memristive Properties of PANI-Polysterene/PVDF-TrFE Interface