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The hole blocking layer plays an important role in suppressing recombination of holes and electrons between the perovskite layer and fluorine-doped tin oxide (FTO). Morphological defects, such as cracks, at the compact TiO2 hole blocking layer due to rough FTO surface seriously affect performance of perovskite solar cells (PSCs). Herein, we employ a simple spin-coating SnO2 thin film solution to cover cracks of TiO2 hole blocking layer for PSCs. The experiment results indicate that the TiO2/SnO2 complementary composite hole blocking layer could eliminate the serious electrical current leakage existing inside the device, extremely reducing interface defects and hysteresis. Furthermore, a high efficiency of 13.52% was achieved for the device, which is the highest efficiency ever recorded in PSCs with spongy carbon film deposited on a separated FTO-substrate as composite counter electrode under one sun illumination.

Facile Solution Spin-Coating SnO2 Thin Film Covering Cracks of TiO2 Hole Blocking Layer for Perovskite Solar Cells