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A multilayer narrow bandpass filter that consists of silver and silicon thin films is designed using the admittance tracing method. Owing to the low loss of silicon in the infrared range, the peak transmittance at a wavelength of 950 nm exceeds 85%. To eliminate the sidebands that are adjacent to the passband, a compact four-layered structure is proposed to generate an angle-insensitive spectrum. In fabrication, a silver-silicon multilayer is deposited to approach the design.

Design and Fabrication of a Narrow Bandpass Filter with Low Dependence on Angle of Incidence