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The laser-induced thermal stresses in silicon dioxide films are calculated using molecular dynamics simulations. The absorption of the laser energy is simulated by the linear temperature growth from room temperature to 1300 K in a time equal to the laser pulse duration. The maximum values of stresses for picosecond pulses are approximately twice as high as for nanosecond pulses. The stresses in highly porous glancing angle deposited films are approximately two times lower than in dense films. Stress waves caused by picosecond pulses are observed in dense films. An increase in the heating temperature to 1700 K leads to an increase in the absolute stress values for picosecond pulses, and a decrease for nanosecond pulses.

Laser-Induced Thermal Stresses in Dense and Porous Silicon Dioxide Films