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Resistive-type semiconductor-based gas sensors were fabricated for the detection of methyl mercaptan and hydrogen sulfide. To fabricate these sensors, V2O5/WO3/TiO2 (VWT) particles were deposited on interdigitated Pt electrodes. The vanadium oxide content of the utilized VWT was 1.5, 3, or 10 wt.%. The structural properties of the VWT particles were investigated by X-ray diffraction and scanning electron microscopy analyses. The resistance of the VWT gas sensor decreased with increasing methyl mercaptan and hydrogen sulfide gas concentrations in the range of 50 to 500 ppb. The VWT gas sensor with 3 wt.% vanadium oxide showed high methyl mercaptan and hydrogen sulfide responses and good gas selectivity against hydrogen at 300 °C.

CH3SH and H2S Sensing Properties of V2O5/WO3/TiO2 Gas Sensor