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A Cu+ and Ga3+ co-doped ZnIn2S4 photocatalyst (Zn(1−2x)(CuGa)xIn2S4) with controlled band gap was prepared via a simple one-step solvothermal method. Zn(1−2x)(CuGa)xIn2S4 acted as an efficient photocatalyst for H2 evolution under visible light irradiation (λ > 420 nm; 4500 µW/cm2). The effects of the (Cu and Ga)/Zn molar ratios of Zn(1−2x)(CuGa)xIn2S4 on the crystal structure (hexagonal structure), morphology (microsphere-like flower), optical property (light harvesting activity and charge hole separation ability), and photocatalytic activity have been investigated in detail. The maximum H2 evolution rate (1650 µmol·h−1·g−1) was achieved over Zn0.84(CuGa)0.13In2S4, showing a 3.3 times higher rate than that of untreated ZnIn2S4. The bandgap energy of Zn(1−2x)(CuGa)xIn2S4 decreased from 2.67 to 1.90 eV as the amount of doping Cu+ and Ga3+ increased.

The Effect of Cu and Ga Doped ZnIn2S4 under Visible Light on the High Generation of H2 Production