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The band gap controlled photocatalyst (Zn0.74Cu0.13In2S3.805) was prepared via a simple one-step solvothermal method. The effects of doping of Cu+ and excess In on the photocatalytic activity of ZnIn2S4 photocatalyst were investigated. In addition, optical properties, surface morphology and crystal structure were evaluated. The maximum H2 evolution rate (2370 µmol h−1 g−1) was achieved with Zn0.74Cu0.13In2S3.805, which was about five times higher than that of untreated ZnIn2S4 under visible light (λ ≥ 420 nm). The band gap of Zn0.74Cu0.13In2S3.805 decreased to 1.98 eV by raising the maximum position of the valence band, compared to ZnIn2S4. Furthermore, the recombination of electron hole pairs was effectively reduced. This research contributes to the development of highly active photocatalysts under visible light.

Improvement of Photocatalytic H2-Generation under Visible Light Irradiation by Controlling the Band Gap of ZnIn2S4 with Cu and In