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This study investigates the reflectance of the defective mode (DM) and the lateral shift of reflected beam in defective photonic crystals incorporated with single-layer graphene by the transfer matrix method (TMM). Graphene, treated as an equivalent dielectric with a thickness of 0.34 nm, was embedded in the center of a defect layer. The reflectance of the DM was greatly enhanced as the intraband transition of electrons was converted to an interband transition in graphene. The reflectance of the DM could be further enhanced by increasing the Bragg periodic number. Furthermore, a large lateral shift of the reflected beam could also be induced around the DM. This study may find great applications in highly sensitive sensors.

Reflection Enhancement and Giant Lateral Shift in Defective Photonic Crystals with Graphene