English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this work, we propose a new approach to create striped patterned sapphire substrate (PSS) under the circumstance that grooved patterned sapphire substrate technology exhibits more potential to reduce dislocation density in GaN (gallium nitride) epilayers. The striped grooves of patterned sapphire substrate are ablated by femtosecond laser. After the process of metal-organic chemical vapor deposition (MOCVD) method, the c-plane GaN epitaxial layers grown on striped PSS have larger crystallite size, which brings much less crystal boundary. There is much less compressive stress between the GaN crystals which improves the smoothness and compactness of GaN epilayers. This result demonstrates a significant improvement in the crystallinity of the c-plane GaN epitaxial layers grown on striped PSS.

Quality-Improved GaN Epitaxial Layers Grown on Striped Patterned Sapphire Substrates Ablated by Femtosecond Laser