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In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices. Similar to n-type devices, p-type NW-FETs are less affected than FinFETs by the TID effect. For the inverter TID circuit simulation, both n- and p-types of FinFET and NW-FET were analyzed regarding the TID effect. The inverter operation considering the TID effect was verified using the Berkeley short-channel insulated-gate FET model (BSIM) common multi-gate (CMG) parameters. In addition, an inverter circuit composed of the NW-FET exhibited a smaller change by the TID than that of an inverter circuit composed of the FinFET. Therefore, the gate controllability of the gate-all-around (GAA) device had an excellent tolerance to not only short-channel effects (SCE) but also TID effects.

Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET