English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Microcrystalline silicon, which is widely used in the microelectronics industry, is usually fabricated by chemical vapor deposition techniques. In recent years, magnetron sputtering has been considered as an alternative because it is a simpler, cheaper and more eco-friendly technique. The big drawback of this technique, however, is the need to recrystallize the as-deposited amorphous silicon, which can be done by metal-induced crystallization. Among the different suitable metals, copper has not been extensively investigated for this purpose. Furthermore, the applicability of the microcrystalline film prepared by this method has not been evaluated for photovoltaic device fabrication. Therefore, this paper reports the fabrication of p-type microcrystalline silicon thin film by magnetron sputtering and copper-induced crystallization techniques, and evaluates its appropriateness for solar cell fabrication. In the first step, 60 nm of silicon followed by 10 nm of copper were deposited on n-type silicon wafer and glass substrates, both by the magnetron sputtering technique. Then, the as-deposited samples were annealed at temperatures from 450 °C to 950 °C. The crystal properties of the resulting films were characterized by Raman and X-ray diffraction spectroscopies and optical and secondary emission microscopies, while their electrical characteristics were determined by Hall-effect, J-V curve and external quantum efficiency measurements. These characterizations confirmed the formation of a layer of microcrystalline silicon mostly in the   direction with a crystallization ratio of 93% and a largest grain size of 20 nm. The hole concentration and mobility of the fabricated p-type microcrystalline silicon layer were about 1017~1019 cm−3 and 8 cm2/V.s, respectively. By using the fabricated film as the emitter layer of a p-n junction solar cell, a good rectification ratio of 4100 and reverse saturation current density of 85 nA.cm−2 were measured under dark conditions. The highest photovoltaic conversion efficiency, i.e., 2.6%, with an open-circuit voltage of 440 mV and short-circuit current density of 16.7 mA/cm2, were measured under AM1.5G irradiance. These results indicate that microcrystalline silicon created by magnetron sputtering and copper-induced crystallization has considerable potential for photovoltaic device fabrication.

applied sciences

Investigation of Microcrystalline Silicon Thin Film Fabricated by Magnetron Sputtering and Copper-Induced Crystallization for Photovoltaic Applications