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A terahertz (THz) detector based on thermoelectric thin films was simulated using the finite elements method. The thermoelectric circuit consisted ofS bandB  i 88  S  b 12150-nm films on the mica substrate.S b    ,B  i 88  S  b 12, and mica-substrate properties have been measured experimentally in the THz frequency range. The model of electromagnetic heating was used in order to estimate possible heating ofS b    -    B  i 88  S  b 12contact. THz radiation power varied from 1    μ   W to 50 mW, and frequency varied in the range from 0.3 to 0.5 THz. The calculations showed a temperature difference of up to 1 K, voltage up to 0.1 mV, and responsivity of several mVW− 1. The results show that thinS bandB i − S bthermoelectric films can be used for THz radiation detection at room temperatures.

FEM Simulation of THz Detector Based on Sb and Bi88Sb12 Thermoelectric Thin Films