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In this work, we report the photoelectrical properties of the (CdS/CdTe) structure as a function of the reverse bias voltage, light intensity and incident power wavelength. The investigated photodetection performance is located in the visible light spectrum situated at wavelength range (488-595 nm) and the maximum photocurrent at (505 nm). The photodetection parameters such as quantum efficiency, responsivity, and detectivity have been studied as a function of incident power wavelength at different reverse bias voltages. These studies gave somewhat low values of such parameters which describe the performance of any photodetector.

A Study Of Photoelectrical Characteristics Of (CdS/CdTe) Heterojunction