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Silicon detection is a mature technology for registering the passage ofcharged particles. At the same time it continues to evolve toward increasingradiation tolerance as well as precision and adaptability. For these reasons itis likely to remain a critical element of detection systems associated withextra-terrestrial exploration. Silicon sensor leakage current and depletionvoltage depend upon the integrated fluence received by the sensor, and upon itsthermal history during and after the irradiation process. For minimalassumptions on shielding and hence on particle energy spectrum, and usingpublished data on Martian ground temperature, we predict the leakage currentdensity and the depletion voltage, as a function of time, of silicon sensorsdeployed continuously on the Mars surface for a duration of up to 28Earth-years, for several sensor geometries and a worst-case temperaturescenario.

Prediction of Leakage Current and Depletion Voltage in Silicon Detectors under Extra-Terrestrial Radiation Conditions