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We have investigated atomic and electronic structure of grain boundaries inmonolayer MoS2, where relative angles between two different grains are 0 and 60degree. The grain boundaries with specific relative angle have been formed withchemical vapor deposition growth on graphite and hexagonal boron nitrideflakes; van der Waals interlayer interaction between MoS2 and the flakesrestricts the relative angle. Through scanning tunneling microscopy andspectroscopy measurements, we have found that the perfectly stitched structurebetween two different grains of MoS2 was realized in the case of the 0 degreegrain boundary. We also found that even with the perfectly stitched structure,valence band maximum and conduction band minimum shows significant blue shift,which probably arise from lattice strain at the boundary.

The Atomic and Electronic structure of 0{\deg} and 60{\deg} grain boundaries in MoS2