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We report on the growth of an ordered array of MoS 2  nanodots (lateral sizes in the range of ∼100–250 nm) by a thermal chemical vapor deposition (CVD) method directly onto SiO 2  substrates at a relatively low substrate temperature (510–560°C). The temperature-dependent growth and evolution of MoS 2  nanodots and the local environment of sulfur-induced structural defects and impurities were systematically investigated by field emission scanning electron microscopy, micro-Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) techniques. At the substrate temperature of 560°C, we observed mostly few-layer MoS 2 , and at 510°C, multilayer MoS 2  growth, as confirmed from the Raman line shape analysis. With reduced substrate temperature, the density of MoS 2  nanodots decreases, and layer thickness increases. Raman studies show characteristic Raman modes of the crystalline MoS 2  layer, along with two new Raman modes centered at ∼346 and ∼361 cm −1 , which are associated with MoO 2  and MoO 3  phases, respectively. Room temperature photoluminescence (PL) studies revealed strong visible PL from MoS 2  layers, which is strongly blue-shifted from the bulk MoS 2  flakes. The strong visible emission centered at ∼ 658 nm signifies a free excitonic transition in the direct gap of single-layer MoS 2 . Position-dependent PL profiles show excellent uniformity of the MoS 2  layers for samples grown at 540 and 560°C. These results are significant for the low-temperature CVD growth of a few-layer MoS 2  dots with direct bandgap photoluminescence on a flexible substrate.

Low-Temperature Chemical Vapor Deposition Growth of MoS2 Nanodots and Their Raman and Photoluminescence Profiles