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Light trapping, caused by the introduction of metallic nanoparticles, has been demonstrated to enhance photo-absorption in GaAs solar cells. In this study, we successfully synthesized gold nanostar thin film with hot spots and obtained a notable improvement of power conversion efficiency (PCE) in single-junction and three-junction high-performance GaAs solar cells by incorporating the poly (3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layer, which enables a much stronger light trapping capability and scattering enhancement than conventional metal nanostructures. Increases of 5.2% and 3.94% in short circuit current density (I sc ) were achieved for single-junction cells and three-junction cells while the enhancement in cell PCE was 3.85 and 2.50%, respectively. The relationship between the optical characteristics, the distribution density of the gold NSs and the performance of GaAs solar cells was systemically investigated.

Enhancement in Power Conversion Efficiency of GaAs Solar Cells by Utilizing Gold Nanostar Film for Light-Trapping