English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

La1_xSrxMn03 films were deposited on SiOz/Si substrates by using the facing target sputtering apparatus with LaO.76SrO.24Mno.7S03 targets in mixture gas of Kr and 0z or Ar and 02' For films deposited in Kr+02, (111) orientation was observed, while (110) orientation was preferential for films deposited in Ar+02. 4nMs of as-deposited films was very small at most 0.17 kG, of which the value corresponded to 1/18 of that of targets. It increased up to 2.4 kG after post-annealing at 1000QC in 0z, while the films prepared under same conditions in Ar+02 exhibited relatively small 4nMs of 1.6 kG

Crystal Structure and Magnetic Characteristics of (La,Sr)MnO<sub>3</sub> Films Deposited by Kr Sputtering