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Dielectric AlN thin films have been prepared by reactive sputtering method, using a facing targets sputtering apparatus with a DC power supply. The AlN films deposited at the ratio in pressure of nitrogen of 21 % exhibited refractive index as high as 2.35 and revealed sharp rocking curve of x-ray diffraction pattern with full width of half maximum as small as 5 deg.

DIELECTRIC AIN THIN FILMS WITH HIGH REFRACTIVE INDEX PREPARED BY PLASMA FREE DC SPUTTERING