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Advanced electronic materials have attracted great interest for their potential use in flexible, large-area, and printable electronic applications. However, fabricating high-performance low-voltage thin-film transistors (TFTs) for those applications with these advanced semiconductors is still challenging because of a lack of dielectric materials which satisfy both the required electrical and physical performance. In this work, we report self-assembled hybrid multilayer gate dielectrics prepared using a facile solution procedure to achieve organic semiconductor and amorphous oxide semiconductor-based thin-film transistors with ultralow operating voltage. These self-assembled hybrid multilayer gate dielectrics were constructed by iterative self-assembly of synthesized bifunctional phosphonic acid-based organic molecules and ultrathin high-k hafnium oxide layers. The novel self-assembled hybrid multilayer gate dielectrics exhibit excellent dielectric properties with exceptionally large capacitances (up to 815 nF/ cm2) and low-level leakage current densities of  104, and threshold voltage: ± 0.5 V).

Organic-Inorganic Hybrid Gate Dielectrics Using Self-Assembled Multilayers For Low-Voltage Operating Thin-Film Transistors