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Quarternay carbides of Ti 3 Al x Si 1-x C 2  (x=0.3, 0.5, and 0.7) were oxidized at 400, 600, and 800 °C for 0.5-6 months in order to study their long-time oxidation behavior in air. When they were oxidized at 400-600  o C for 0.5-3 months, oxidation proceeded relatively slowly with moderate weight gains. However, further oxidation at 400-600  o C for 6 months resulted in the oxidation-induced microcracking of oxide scales due to large volume expansion and large stress induced owing to the formation of Al 2 O 3 , SiO 2 . TiO 3 , and TiO 2  in oxide scales. However, at 800  o C, microcracking of oxide scales, which could lead to pulverization of Ti 3 Al x Si 1-x C 2 , did not occur due to stress relaxation in oxide scales. Instead, at 800  o C, Ti 3 Al x Si 1-x C 2  oxidized rapidly to form thick, somewhat porous oxide scales, which consisted primarily of an outer TiO 2  layer with some Al 2 O 3 , an intermediate Al 2 O 3  layer with some TiO 2 , and an inner TiO 2  layer with some (SiO 2 +Al 2 O 3 ). The overall longtime oxidation resistance of Ti 3 Al x Si 1-x C 2  at 400-800 °C was considered to be poor. Factors that determined the oxidation rates of Ti 3 Al x Si 1-x C 2  were; (1) How fast titanium oxidized to semi-protective titanium oxides, (2) How fast Al and Si oxidized to Al 2 O 3  and SiO 2  barrier oxides, and (3) Whether oxidation-induced microcracking occurred in oxide scales or not. The ratio of Al/Si in Ti 3 Al x Si 1-x C 2  and the matrix grain size were apparently not dominant factors, because the basic oxidation mode of Ti 3 Al 0.3 Si 0.7 C 2 , Ti 3 Al 0.5 Si 0.5 C 2 , and Ti 3 Al 0.7 Si 0.3 C 2  was similar under the identical oxidation condition.

Long-time Oxidation of Ti<sub>3</sub>(Al,Si)C<sub>2</sub> Carbides at 400-800 <sup>o</sup>C