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We investigated solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs) which were fabricated by spin coating with simultaneous irradiation by ultraviolet light. The proposed treatment enhanced the efficient condensation and densification of the oxide semiconducting channel layer by decreasing oxygen-vacancy-related defects and increasing metal-oxide bonds. An IZO TFT irradiated for 90 sec had a field-effect mobility of 5.6 cm/Vs, a threshold voltage of -0.13 V, a subthreshold swing of 0.64 V/decade, and an on/off current ratio of 1.7 × 10 with a width/length of 2000 μm/200 μm. †(Received October 18, 2016; Accpeted April 13, 2017)

Study of Solution-Processed Indium Zinc Oxide TFTs Made by Simultaneous Spin Coating and Ultraviolet Light Irradiation