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Magnetic sensors are key elements in many security and military systems. Magnetic sensors are often used for military applications such as navigation, position tracking and antitheft systems. Nowadays sensitive magnetic sensors are used in many technical systems, including modern anti-tank missiles to identify the center of the target area and a minimal armor region. The applications of magnetoresistive structures based on semiconductor crystals of InSe for high precision measurement of the magnetic field are outlined in this article. Possibilities of using magnetic field sensors based on InSe structures for revealing the armour military vehicles are discussed. The impact of metal impurities on the layered structure of the semiconductor material as referred to the strong covalent bond within the layers as well as the weak van-der-Waals bond in the interlayer space is studied. Nyquist diagrams for InSe crystal with the impurities of nickel at different temperatures ranging from liquid nitrogen to room temperature are analyzed. Temperature is shown to be a significant factor for affecting the Nyquist diagrams. The curvature of the Nyquist diagrams for intercalated InSe varies with the temperature as opposed to the pure InSe. Topological images of crystal surface obtained by using atomic force microscopy confirmed the layer structure of nickel-intercalated InSe. Structures with alternating layers of semiconductor and metal provide the fundamental control of magnetic properties. These structures have a sharp anisotropy of magnetic susceptibility. The investigated semiconductor crystals with impurities of 3d-elements can extend the functionality of modern magnetic sensors designed to detect heavy armor.

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Analysis of the electrical, magnetic and structural properties of A3B6 type layered semiconductor crystals intercalated with metals with reference to their military applications