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The prospects of application of photosensitive semiconductor nanostructures based on layered crystals In4Se3 are outlined in this article. The possibility of using the intercalated AgxIn4Se3 in the photodetectors to detect military armored vehicles is studied. The behavior of a semiconductor crystal AgxIn4Se3 in a uniform magnetic field using Hall effect is studied. The comparison of the behavior of pure In4Se3 and intercalated crystal by silver AgxIn4Se3 in the magnetic field and the influence of silver on the sensitivity of the crystal relative to the magnetic field disturbances are discussed in the paper. Mathematical processing of the experimental data dependence of the Hall voltage of In4Se3 on the magnetic field is carried out and the analytical expression of the approximating function is found.

A study of the kinetic properties of nanostructured intercalates of AgxIn4Se3 aimed at the creation of photodetectors