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This paper presents new micro-fabrication tools and material/process characterization for wafer-level lapping and wetetch patterning of bulk PZT on silicon. The process enables precise control over final film thickness (5-100 µm) with high wafer-level uniformity (±0.5 µm), and the lapping-rate (10-30 µm/min) and surface roughness (43 nm) are characterized. Additionally, surface micro-machining of suspended PZT structures is demonstrated by bonding and thinning over pre-patterned silicon features. Finally, a new wet‐etching process is developed for low-undercut (0.6:1) patterning of > 5 µm thick PZT films, and d33-EFF piezoelectric strain coefficients on thinned and patterned bulk PZT-5A and 5H films are measured as 140 and 311 pm/V, respectively.

WET ETCHING & UNIFORM WAFER-LEVEL THINNING OF BULK PIEZOELECTRIC CERAMICS ON SILICON