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This paper reports on the design and implementation of thin film multilayer dielectric to form Bragg reflectors on the sidewalls of micromachined atomic cells. Due to deposition shadowing, significant variations in the thicknesses of the thin films are encountered when the layers are deposited using PECVD. These gradients in thickness may limit optical performance of the reflector in atomic cells. An optimized design procedure is described to maximize the performance of the reflector at a wavelength of 795 nm under the variations in material thickness. In addition, an optical design based on two shifted quarter wave Bragg reflectors in series is used to form a reflector with extended optical bandwidth for added robustness. The extended reflectance range maintains high reflection at the D1 absorption wavelength of 87 Rb despite variations in uniformity greater than 70 %. The developed reflector technology is ideally suited for use in miniature rubidium vapor cells. We demonstrate less than 1.5 dB of return loss with circular polarization ellipticity maintained to ±2 ◦ is demonstrated, as

ROBUST OPTICAL DESIGN OF ANGLED MULTILAYER DIELECTRIC MIRRORS OPTIMIZED FOR RUBIDIUM VAPOR CELL RETURN REFLECTION