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This paper discusses the strain sensitivity of silicon with deep levels under variable pressure. It is shown that in the pressure swing in silicon with deep levels, there is a redistribution of the primary spatial inhomogeneities in the distribution of impurities so that the electron-hole relaxation after stress relief will occur in the new potential relief. ABSTRAK: Kajian ini membincangkan tentang sensitiviti kepekaan strain silikon pada pelbagai tahap dalam tekanan. Keputusan menunjukkan terdapat ketidakharmonian agihan pada spasial utama dalam agihan kotoran dengan ayunan tekanan dalam silikon pada tahap dalam, supaya relaksasi lubang-elektron setelah pelepasan tekanan akan berlaku dalam pelepasan potensi baru.

ABOUT THE SILICON SENSITIVITY OF THE DEEP LEVEL WITH ALTERNATING PRESSURE