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Magnetoelectronic devices contain nanoscaled layer stacks. Their structural and chemical characterization is necessary for the control of the deposition process as well as for the understanding of structure formation at different temperatures. The analytical transmission electron microscopy including scanning transmission electron microscopy with high angle annular dark field imaging, energy-dispersive X-ray analysis and electron energy-loss spectrometry meets this challenge. This is demonstrated by results of investigation of multilayers for Giant Magnetoresistance devices and of layer stacks for Tunnel Magnetoresistance units. The results are confirmed by other, more integral methods like X-ray diffraction and reflectometry, Auger electron, and photoelectron spectroscopy.

Nanoscaled multilayers for magnetoelectronics – characterised by analytical TEM