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Cu 2 O can be electrodeposited  epitaxially  onto Si (001) single-crystal substrates with an orientation relationship that can be described as a 45° rotation around the 〈001〉 direction that both crystals have in common along the growth direction. We show that this orientation relationship corresponds to maximum “reciprocal-space overlap”. In apparent contradiction to the unique orientation relationship, conventional, high-resolution, and high-resolution analytical transmission electron microscopy has revealed that an  amorphous  interlayer, which has a thickness of about 4 nm and mainly consists of SiO 2 , separates the Cu 2 O layer and the Si substrate. Potential micromechanisms for the evolution of this structure during early stages of growth are discussed.

Microstructure of Cu 2 O/Si interfaces, made by epitaxial electrodeposition