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The tracer self-diffusion coefficients  D  T  of implanted  71 Ge and  31 Si in both relaxed monocrystalline Si y Ge 1 –y  epilayers and specimens made from bulk Si y Ge 1 –y  have been measured as functions of temperature  T  (653 °C ≤  T  ≤ 1263 °C) and composition  y  (0 ≤  y  ≤ 1) by means of radio-tracer techniques, in which serial sectioning was done by ion-beam sputtering. For all compositions, the  T  dependencies of  D  T  for  71 Ge and  31 Si are of Arrhenius type. The  y  dependencies of the pre-exponential factors of the self-diffusion coefficients and of the diffusion enthalpies show a break at  y  ≈ 0.65. This is interpreted in terms of a transition from interstitialcy-( y  ≳ 0.65) to vacancy-( y ≲ 0.65) mediated self-diffusion.

Self-diffusion of 71 Ge and 31 Si in Si –Ge alloys