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The paper deals with the interrelations between preparation and microstructure of a Si/SiO 2 /Ti/Pt/TiO 2 /Pb(Zr,Ti)O 3  multilayer configuration. A wet chemical approach was used for Pb(Zr,Ti)O 3  (PZT) deposition on sputtered Ti/Pt thin films. The chosen sol-gel process allows heterogeneous nucleation of PZT on the underlying Pt electrode at a temperature of 400 °C without interference of Ti diffusion from the Ti interlayer. In this case the texture of the PZT film can be switched from (100) to (111) by the thin TiO 2  interlayer on top of the Pt (111). This knowledge is essential for the fabrication of ferroelectric thin film devices with tailored properties.

Investigation of Interlayer Phenomena in Ti/Pt Electrodes for Ferroelectric Thin Film Devices