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NiO and CeO2 buffer layers for YBa 2 Cu 3 O 7  (YBCO) coated conductors were deposited on biaxially textured Ni substrates by a metal-organic chemical vapor deposition(MOCVD). The Ni tape substrate was fabricated by sintering of Ni powder at 1100°C for 6h, and cold-rolled into thin tapes. The subsequent heat treatment of the Ni tape at 1000°C resulted in (200) texture development. The surface conditions of the coating layers were characterized as a function of the oxygen partial pressure (PO2) and deposition temperature. According to the Atomic Force Microscopy and SEM results, the average surface roughness of NiO was in the range of 3.1 4.6 nm which was much smoother than that prepared by an oxidation method. In the case of CeO2 films, the surface roughness was kept less than 15 nm up to the deposition temperature of 500°C, but it rapidly increased at T = 520°C due to rapid grain growth of the CeO 2 . The (200) texture of CeO 2  was formed at T=500°C-520°C, t = 3–15 min and P O2 =2.30 torr.

Analysis of NiO and CeO 2 Buffer Layers foir YBCO Coated Conductors on Textured Ni Substrates