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A new method was developed for quickly preparing a highemissivity silicon boride compound of SiB x  (x = 3, 4, 5, 6) by highly exothermic Ti-TiO 2 -Si-Al chemical oven preheating. The SiB x  combustion synthesis process and adiabatic combustion temperature were investigated. A large exothermic reaction occurred at the combustion temperature of 1 700 K. X-ray diffraction results indicate that an SiB x  phase and a substantial amount of unreacted Si were identified in the products. By increasing the boron content until the Si-B ratio reached to 1 : 6, the diffraction peaks primarily indicated SiB 6 , SiB 4 , and Si 11 B 33  in the final product. According to the spectra and quantitative results, the atomic chemical composition ratio of Si and B was close to the nominal composition. Thus, this method offers an efficient way to produce Si-B compounds with less time and energy consumption than current methods.

Preparation of silicon boride SiB x (x = 3, 4, 5, 6) powders by chemical oven self-propagating combustion synthesis