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The cementation of indium on an aluminum plate in indium-bearing concentrated hydrochloric acid solutions has been performed over a period of 2 hr at 278, 298, 318, 328 and 338 K. Aluminum was selected for two reasons: (1) aluminum has significantly higher oxidation potential compared to indium and (2) the leaching of waste plasma display panels produces a significant concentration of aluminum ions in solution. The effect of the cementation variables was comprehensively investigated, and a preliminary kinetic analysis was made using first order kinetics with pertinent Arrhenius-type plots. The cementation process was highly temperature sensitive for the range of 298–338 K, and more than 96% of the indium was recovered at 338 K. For morphology and purity analysis, indium powders obtained from the cementation process were examined using various analytical tools, such as X-ray diffraction and scanning electron microscopy–energy dispersive X-ray spectrometry.

Indium ion cementation onto aluminum plates in hydrochloric acid solutions: a kinetic perspective