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The high temperature stability of γ-Al 2 O 3  films deposited using filtered cathodic arc and plasma assisted chemical vapor deposition on Ti 0.33 Al 0.67 N coated WC–Co cutting inserts is investigated. X-ray diffractometry reveals that filtered cathodic arc deposited films transform partially into the thermodynamically stable α-Al 2 O 3  phase at a temperature of 1000°C. The γ to α-Al 2 O 3  transformation for plasma assisted chemical vapor deposition grown films is observed at 900°C. These results are in qualitative agreement with differential scanning calorimetry measurements. Transmission electron microscopy on filtered cathodic arc and plasma assisted chemical vapor deposition films annealed at 900°C reveals the existence of hexagonal AlN in the Ti 0.33 Al 0.67 N interlayer, as well as Al depletion at the Al 2 O 3 /Ti 0.33 Al 0.67 N interface. After annealing the plasma assisted chemical vapor deposition sample at 900°C, α-Al 2 O 3  grains with a size of ∼100 nm are observed inside the γ-Al 2 O 3  matrix, while for filtered cathodic arc samples only the γ-phase is identified. Transmission electron microscopy analysis on both filtered cathodic arc and plasma assisted chemical vapor deposition samples annealed at 1000°C shows that the original Al 2 O 3 /Ti 0.33 Al 0.67 N/WC–Co layer architecture is no longer intact. The formation of TiO 2  is detected along the growth direction of the Al 2 O 3  films. The present study suggests that not only the morphology and the impurities incorporated into γ-Al 2 O 3  but also stability of the Ti 0.33 Al 0.67 N interlayer determine the high temperature stability of γ-Al 2 O 3 /Ti 0.33 Al 0.67 N coated hardmetal.

On the high temperature stability of γ-Al 2 O 3 /Ti 0.33 Al 0.67 N coated WC–Co cutting inserts