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Dimethyltelluride has been used as a dopant source for GaSb epilayers grown via atmospheric pressure metalorganic chemical vapour deposition (MOCVD). It has been observed that the electron concentration ( n ) is proportional to the Te partial pressure in the vapour phase, until  n  saturates at high Te partial pressure. Electron concentrations as high as 1.36 × 10 18  cm – 3  have been measured with imperfect morphology, and as high as 1.22 × 10 18  cm – 3  with excellent, mirror like, morphology. These appear to be the highest electron concentrations reported to date for any MOCVD-growth epitaxial n-type GaSb doped with DMTe and grown at 540 °C with a V/III ratio of 1.4. The absorption spectra of GaSb doped with DMTe show that the heavily doped samples have a less abrupt edge. The absorption coefficient (α) strongly depends on the free carrier concentration. PL spectra of the epilayers are also reported.

Surface morphology, electrical and optical properties n-type doped MOCVD grown GaSb using dimethyltellurium