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Sol-gel prepared Ba 0.6 Sr 0.4 TiO 3  (BST) thin films were prepared on platinized silicon substrate and annealed by rapid thermal annealing at temperatures ranging from 650 °C to 850 °C. X-ray diffraction, atomic force microscopy and electrical measurements were used to investigate the temperature dependence of the structural and physical properties of Ba 0.6 Sr 0.4 TiO 3  thin film. The dielectric constants of BST samples annealed at 700 °C and 750 °C, measured at zero-bias electric field, are 166 and 193, respectively. It is found that all the prepared BST films show Ohmic-like conduction at low voltages except for the 650 °C annealed BST sample, for which Ohmic conduction covers the whole measured voltage range; BST films annealed at 700 °C, 750 °C and 800 °C demonstrate Poole–Frenkel emission conduction at high voltages, while BST film annealed at 850 °C presents Schottky emission behavior.

Temperature dependence of rapidly thermally annealed Ba 0.6 Sr 0.4 TiO 3 thin film fabricated on platinized Si substrate