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The results of high-resolution X-ray diffraction and X-ray glancing-incidence mirror reflection studies of structural characteristics of the GaAs/Ga 1– x  In  x  As/GaAs diluted magnetic semiconductors, with an Mn δ-layer well separated from the Ga 1– x  In  x  As quantum by the GaAs spacer, are presented. A strong correlation between the structural, magnetic, electro-physical and optical properties of the samples gives evidence that the samples consist of a distribution of ferromagnetic and paramagnetic regions. Such a phase separation can be understood by a non-random distribution of the local magnetic moments and fluctuations of the exchange interaction in the samples having semiconductor-type conductivity.

Structural, magnetic, and transport properties of quantum well GaAs/δ-Mn/GaAs/In x Ga 1– x As/GaAs heterostructures