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The influence of Fe acceptor and Fe – F acceptor – donor co-doping on the dielectric response of screen-printed Ba 0.6  Sr 0.4  TiO 3  thick-films on alumina substrates has been investigated. The Ba 0.6  Sr 0.4  TiO 3  powders were synthesized by freeze-drying of sols. Permittivity, dielectric loss, and tunability were investigated at kHz frequencies with a planar metal-insulator-metal capacitor structure, and at GHz frequencies up to 40 GHz using coplanar waveguide structures. Pure acceptor doping by Fe was found to have a distinct influence on permittivity and dielectric loss-factor at kHz-frequencies and at GHz frequencies due to an internal bias field and pairs of associated defects. Co-doping with F significantly suppresses the influence of the internal bias field and defect-associates at low and microwave frequencies. The commutation quality factor at 10 GHz and E eff  = 5.8 V μm -1  was increased by co-doping the thick-films with Fe and F. Such doped Ba 0.6  Sr 0.4  TiO 3  films show a high potential for tunable microwave applications.

Influence of Fe–F-co-doping on the dielectric properties of Ba 0.6 Sr 0.4 TiO 3 thick-films