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The present study investigates crystal orientations and residual stresses in TiN films deposited by arc ion plating. TiN films approximately 2.0 μm thick were deposited on a steel substrate. With a bias voltage of 0 V, the TiN film exhibited strong {110} texture, whereas the dominant orientation of the film deposited at −100V was {111}. TiN films had very high compressive residual stresses: −8.6 GPa in the {110} textured film and −10.0 GPa in the {111} textured film. These residual stresses decreased with increasing annealing temperature and the reduction rate was greater for the {111} than for the {100} film. The behavior of residual stresses in the {111} and {110} textured layers of {111}/{110} textured double-layer film was identical to that for single-layer films.

international journal of materials research

Thermal relaxation of residual stresses in TiN films deposited by arc ion plating: Dedicated to Professor Eckard Macherauch on the occasion of the 80th anniversary of his birth