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In precursor-derived nanocrystalline Si–B–C–N materials, grain or interphase boundaries constitute a major part of the material. They control various properties of nanostructured solids, e.g., by forming fast diffusion pathways. In such highly covalent materials, where the interfaces between the individual crystallites or domains tend to be broadened and structurally disordered, high-temperature plastic deformation (i.e., the creep behavior) can be used as a probe which is particularly sensitive to processes involving internal interfaces and glass-like features of the microstructure. The focus of the present study is an investigation of the deformation behavior of precursor-derived nanocrystalline Si–B–C–N ceramics in the phase-separated amorphous and nanocrystalline states under inert atmospheres. A concise analysis of creep mechanisms free of any oxidation effects was carried out. Isothermal compression creep experiments at 1400°C and at various loads (50MPa–150MPa) have indicated a stress exponent near to unity hinting diffusion creep, and an activation energy of 0.16 ± 0.03 MJ/mol was derived from temperature change experiments under an iso-stress condition. The mechanisms of deformation are elucidated using a free volume model.

High-temperature deformation behavior of nanocrystalline precursor-derived Si–B–C–N ceramics in controlled atmosphere