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This publication presents results of experimental investigation and thermodynamic calculation of the ternary Ge-In-Sb system. Isothermal section of the Ge-In-Sb system at 300 °C has been extrapolated using optimized thermodynamic parameters for the constitutive binary systems. Microstructure analysis was carried out by light microscope, scanning electron microscopy with energy dispersive spectrometry and X-ray powder diffraction methods and obtained results were compared with predicted phase equilibria. Hardness of selected alloys annealed at 300 °C was measured using Vickers microhardness test and Brinell hardness test. Electrical conductivity of a number of alloys annealed at 300 °C was experimentally determined. Good overall agreement between experimental and calculated values was obtained.

Electrical conductivity and hardness of ternary Ge-In-Sb allyos and calculation of the isothermal section at 300 °C