English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Reactor cleaning processes have been discussed and designed for atomic layer deposition of hafnium oxide film, taking into account the information of silicon epitaxial growth process. One of the key points for designing the reactor cleaning technique is the production of chemical compounds which can be vaporized at low temperatures. Chemical reaction between hafnium oxide and hydrogen chloride was studied and showed that the hafnium chloride was effectively produced by hydrogen chloride gas at temperatures higher than 300°C. The removal of hafnium oxide film deposited in a reactor is expected to be effectively performed at moderately high temperatures.

Advance of Atomic Layer Deposition in Semiconductor Materials Manufacturing Process: Cleaning Technology for Thin Film Formation Reactor