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The effects of high nitrogen (N2) pressure and thermal treatment on the adhesion between a silicon film and a polyethersulfone (PES) substrate during crystallization by excimer laser annealing (ELA) were investigated using silicon nitride (SiNx) as the barrier film for the fabrication of polycrystalline silicon (poly-Si) thin-film transistors on a plastic substrate. As the thickness of the SiNx film increased from 50 to 150 nm at a gas pressure of 0.2 MPa, film exfoliation was suppressed. A poly-Si film with a crystalline fraction of 76% was obtained at an energy density of 200 mJ/cm2 and a high pressure in N2 atmosphere. In addition, thermal treatment before ELA was useful for improving the adhesion between the inorganic film and the PES substrate.

journal of the vacuum society of japan

Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing