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The highly concentrated (almost 100 vol.) ozone gas has been utilized to dry oxidation of SiC single crystal substrates by using a quartz furnace with local heating by a halogen heater. When the ‰ow velocity of ozone was kept as high as 5 m・cm-1 or more, the strong oxidizing power of ozone enabled rapid oxidation of SiC at a considerably lower temperature than that for the oxidation in oxygen. The ozone oxidation also resulted in a lower interface state density in the device charactrization for the MOS structure probably because the ozone oxidation was eŠective in reducing carbon-related defects.

Rapid Oxidation of SiC Using Highly Concentrated Ozone and Characterization of Oxide Films