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The recent development of the study on half-metallic full-Heusler alloy thin ˆlms and their application to spin-electronics devices are reviewed. The progress of preparation technique of Co-based full-Heusler alloy ˆlms with high L21 structural order has made it possible to obtain higher spin-polarization than that of typical transition metals and alloys (Co, CoFe, etc.). Resulting tunnel magnetoresistance in magnetic tunnel junctions exceeds 60 at room temperature. Our recent results on the current-perpendicular-toplane magnetoresistance (CPPGMR) devices with Co2MnSi ˆlms are also shown. The resistance change-area product (DRA) at room temperature was 19 mQmm2, which is one order of magnitude larger than those in previously reported trilayer systems, resulting in the MR ratio of 2.4. The enhanced DRA is considered to originate from the large spin polarization in a high-quality L21 Co2MnSi ˆlm.

Highly Spin-polarized Full-Heusler Alloy Films and Their Application to Spin-electronics Devices