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In this study, we have measured photocurrents and time-resolved photoluminescence spectra of high-quality CVD diamond UV detectors using a short pulse UV laser (wavelength : 220 nm). Photo-excited carrier transport properties measured for CVD diamond films under electric field (E) demonstrate that the photocurrent peak intensity at the shortest period after the pulse excitation proportionally increased with increasing E in the range of E below ≈1 × 103 V/cm while it was proportional to E1/2 in the range of E above ≈ 1 × 103 V/cm. This well corresponds to changes of carrier drift speeds theoretically obtained for sufficiently high quality diamond. On the other hand, the photocurrent intensity integrated in a constant time period (below 360 ns) is almost proportional to E in the whole E regions measured (to 1× 104 V/cm). On the contrary, photoluminescence (PL) intensity only slowly decreased with increasing E while the PL decay constants were independent of E. Furthermore, the non-radiative relaxation processes of photo-excited carriers were almost independent of E in the examined field region.

Transport Properties of Photo-Excited Carriers in Chemical-Vapor-Deposited Singlecrystalline Diamond using a Short Pulse UV Laser