English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

We have observed a stress relaxation of a silicon oxide film made by plasma oxidation with the following nitridation. The radical nitridation reduces the compressive surface stress of the film expansion about 40-80%. This relaxation is larger than that of electron irradiation on the oxide film, which can reduce a disorder-induced surface stress. AES measurement shows the concentration of nitrogen does not precipitate on the SiO2/Si interface but is uniform in the film and is only 3 atom.% in the film.

Surface Stress during Plasma Oxidation and following Nitridation.