English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Near-infrared laser diode spectroscopy at 1.74μm is applied to the detection of trace amounts of HCl in semiconductor process equipment such as an epitaxial growth reactor of Si. The application of the experimental system to different situations of HCl emissions is tested : the low-pressure condition is employed for residual gas monitoring, while the atmospheric pressure condition is used for reaction by-product monitoring. The detection limit of a 50-cm-long path cell is 1 ppm at low pressure (1.07×104 Pa) and 100 ppm at atmospheric pressure. A wide dynamic range of 1 ppm to 1% and a linear response to the HCl concentration are also obtained, both of which are favorable for system integration to manufacturing processes.

Proposal of Near-Infrared Laser Diode Spectroscopy at 1.74.MU.m for HCl Monitor in Semiconductor Processes.